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類金剛石薄膜的電子結(jié)構(gòu)及組分分布研究
類金剛石薄膜的電子結(jié)構(gòu)及組分分布研究
摘要:本論文采用直流磁控濺射,以Ar、Ar與CH4為工作氣體濺射高純石墨靶材制備了DLC薄膜。通過(guò)改變沉積基體的溫度,濺射功率,沉積氣壓和工作氣體等實(shí)驗(yàn)參數(shù),以使得到的碳膜呈現(xiàn)出不同的表面形貌和性能;采用AES、FTIR、、Raman、等現(xiàn)代化測(cè)試手段,通過(guò)對(duì)薄膜宏觀和微觀結(jié)構(gòu)的分析,研究了制備工藝對(duì)DLC薄膜電子化學(xué)鍵結(jié)構(gòu)的影響,重點(diǎn)用俄歇電子能譜CKLL的dN(E)/E的形式來(lái)探索類金剛石薄膜sp2和 sp3的組分分布及其隨膜厚的分布圖。得到以下結(jié)果:
(1)俄歇電子能譜AES 中, CKLL 俄歇譜可以用作表面碳的形式的指紋鑒別,用CKLL 俄歇譜和其價(jià)帶譜分析表征表明所制備氫化薄膜表面具有類金剛石4面體sp3價(jià)鍵結(jié)構(gòu)。
(2)用俄歇電子能譜做薄膜的深度剖析,觀察薄膜內(nèi)層結(jié)構(gòu)和sp2鍵與sp3鍵比率分布。發(fā)現(xiàn)薄膜表面和與基片的界面是富含sp2鍵層,中間是富含sp3鍵層。
關(guān)鍵詞:DLC薄膜,俄歇電子能譜,電子結(jié)構(gòu),sp2鍵與sp3鍵比率
Study of the electronic structure and the range of the constituents of the diamond-like carbon films
Abstract:Diamond-like carbon films were prepared by DC reactive magnetron sputtering with Ar or Ar and CH4 an source gases,and purce graphite as a target.To get the films of differert microtopographies we changes the experimental parameters such as temperature of the depositional kinetosome,the sputtering power,the depositional air pressure and the gases.
We use the modernize tools such as AES,FTIR,Raman to study how the technics influencd the electron chemical bond of the film,and analyzed the macroscopy and microscopy structure of the films.The keystone of the thesis is that use the CKLL to explore the distribution of the sp2and sp3 and the figure of its changing go with the thick of the films.We get such results:
(1) In the AES,CKLL can work as the fingure of the format of the carbon form the teech outwards. So we use it to analyze the token and it shows that the structure of the hydrongenated film is the same as the tetrahedron of the DLC.
(2) The depth profile of the films made by Auger eletronic spectroscopy shows that there are much more sp2 hybrid bonds in the surface of the films and the place which between the surface and the interface of the substrates,and sp3 in the middle.
Key words: Diamond-like carbon films; AES; electronic structure; the ratio of sp2 and sp3
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